GT8G132

www.DataSheet4U.com GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Rating 400 ±6 ±8 8 150 1.1 Unit V V Collector current Collector power dissipation Junction temperature A W JEDEC JEITA ― ― 2-6J1C Storage temperature range www.DataSheet4U.com 150 °C Tstg −55~150 °C TOSHIBA Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] 2 Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/µs. 1 2002-05-17 www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com GT8G132 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = ...