M6MGB331S8AKT

www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description The M6MGB/T331S8AKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP for lead free use. 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, , single power supply and high performance nonvolatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can not be programmed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation can be executed. 8M-bit SRAM is a 1,048,576 bytes / 524,288 words asynchronous SRAM fabricated by CMOS technology for the peripheral circuit . The M6MGB/T331S8AKT is suitable for a high performance cellular phone and a mobile PC that are required to be small mounting area, weight and small power dissipation Features Access Time Flash SRAM Supply Voltage Ambient Temperature Package 70ns (Max.) 85ns (Max.) VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 52pin TSOP(Type-II), Lead pitch 0.4mm Outer-lead finishing:Sn-Cu Application Mobile communication products PIN CONFIGURATION (...