TQM713019

www.DataSheet4U.com TQM713019 Data Sheet 3V HBT GaAs CDMA 4x4mm Power Amplifier Module Features 10 Functional Block Diagram Vref 1 GND Vmode 2 1 Bit Bias Control 9 GND GND 3 8 RFout RFin 4 7 GND Vcc1 5 6 Vcc2 Product Description The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use in mobile phones. Its extremely small 4x4mm package makes it ideal for today’s compact data enabled phones. Its RF performance meets the requirements for products designed to IS-95/98 standards. The TQM713019 is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability, and ruggedness. Selectable bias mode and a shutdown mode with low leakage current improves talk and standby time. The output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power. The module is a 4x4mm land grid array with backside ground. The TQM713019 is footprint compatible with industry standard 4x4mm CDMA PA modules. InGaP HBT Technology High Efficiency: 41% CDMA Low Leakage Current: < 1uA Low Icq = 55mA Supports new chipsets with Vref @ 2.6V Capable of running as 0-bit PA in low bias mode to 28dBm Optimized for 50Ω system Small 10 pin 4x4mm module Excellent Rx band noise performance CDMA 1XRTT, 1XEV-DO compliant Full ESD protection Applications www.DataSheet4U.com IS-95 / CDMA2000 Single mode, dual mode, and tri mode CDMA/AMPS phones Packag...