PH2625L

www.DataSheet4U.com PH2625L N-channel TrenchMOS™ logic level FET Rev. 02 — 24 February 2005 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Optimized for use in DC-to-DC converters s Low threshold voltage s Very low switching and conduction losses s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook computers. 1.4 Quick reference data www.DataSheet4U.com s VDS ≤ 25 V s Qgd = 7.3 nC (typ) s RDSon ≤ 2.8 mΩ (VGS = 10 V) s ID ≤ 100 A s Qg(tot) = 32 nC (typ) s RDSon ≤ 4.1 mΩ (VGS = 4.5 V). 2. Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain mb G mbb076 Simplified outline Symbol D S 1 2 3 4 SOT669 (LFPAK) www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com Philips Semiconductors PH2625L N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name PH2625L LFPAK Description plastic single-ended surface mounted package; 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) peak drain current total...