M5M29GB320VP-80

www.DataSheet4U.com Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) . M5M29GB/T320VP-80 FEATURES Organization ................................. 2,097,152 word x 16bit ................................. 4,194,304 word x 8 bit Boot Block M5M29GB320VP M5M29GT320VP ........................Bottom Boot ........................Top Boot Supply voltage ................................ .............................. VCC = 2.7 ~ 3.6V Access time 90ns (Vcc=2.7~3.6V) Power Dissipation ................................. 72 mW (Max. at 5MHz) Read (After Automatic Power saving) .......... 0.33µW (typ.) Program/Erase ................................. 126mW (Max.) ................................. 0.33µW (typ.) Standby Deep power down mode ....................... 0.33µW (typ.) Auto program for Bank(I) ...