POWER TRANSISTORS. CSD600K Datasheet

CSD600K TRANSISTORS. Datasheet pdf. Equivalent

Part CSD600K
Description PNP PLASTIC POWER TRANSISTORS
Feature www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company .
Manufacture CDIL
Datasheet
Download CSD600K Datasheet



CSD600K
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-126 (SOT-32) Plastic Package
CSB631, CSB631K
CSD600, CSD600K
CSB631, 631K
PNP PLASTIC POWER TRANSISTORS
CSD600, 600K
NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier and Medium Speed Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
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ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 0.5 A; IB = 50 mA
D.C. current gain
IC = 50 mA; VCE = 5 V
VCBO
VCEO
IC
PC
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
VCEO
631 631K
600 600K
max. 100 120 V
max. 100 120 V
max.
1.0 A
max.
8.0 W
max.
150 °C
max.
0.4 V
min.
max.
60
320
max. 100 120 V
max. 100 120 V
Continental Device India Limited
Data Sheet
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CSD600K
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CSB631, CSB631K
CSD600, CSD600K
Emitter-base voltage (open collector)
Collector current
Collector current (peak)
Total power dissipation up to TA = 25°C
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
PC
Tj
Tstg
631 631K
600 600K
max.
5.0 V
max.
1.0 A
max.
2.0 mA
max.
1.0 W
max.
8.0 W
max.
150 ºC
–65 to +150 ºC
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
631 631K
600 600K
Collector cutoff current
IE = 0; VCB = 50 V
Emitter cut-off current
ICBO
max.
1.0 µA
IC = 0; VEB = 4 V
IEBO
max.
1.0 µA
Breakdown voltages
IC = 1 mA; IB = 0
VCEO
min. 100 120 V
IC = 10 µA; IE = 0
IE = 10 µA; IC = 0
www.DataSheet4U.comSaturation voltages
VCBO
VEBO
min. 100 120 V
min. 5.0 V
IC = 500 mA; IB = 50 mA
D.C. current gain
VCEsat
VBEsat
max.
max.
0.4 V
1.2 V
IC = 50 mA; VCE = 5 V
hFE*
min.
max.
60
320
IC = 500 mA; VCE = 5 V
Transition frequency
hFE min. 20
IC = 50 mA; VCE = 10 V
PNP
NPN
fT
typ. 110 MHz
typ. 130 MHz
Output capacitance
VCB = 10 V; IE = 0; f = 1 MHz PNP Cob typ. 30 pF
NPN Cob typ. 20 pF
* hFE classification: D60 - 120, E = 100 - 200, F 160 - 320
Continental Device India Limited
Data Sheet
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