CSD655 Datasheet (data sheet) PDF


CSD655   CSD655  

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www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ C ertified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN EPITAXIAL PLANAR SI LICON TRANSISTOR CSD655 (9AW) TO-92 BC E Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise spe cified) DESCRIPTION SYMBOL VALUE VCBO 3 0 Collector -Base Voltage VCEO 15 Colle ctor -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 700 Collector Current I CP 1.0 Peak PC 500 Collector Power Diss ipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specifi


ed) DESCRIPTION SYMBOL TEST CONDITION MI N TYP VCBO IC=10uA, IE=0 30 Collector - Base Voltage VCEO IC=10mA, IB=0 15 Coll ector -Emitter Voltage VEBO IE=10uA, IC =0 5.0 Emitter Base Voltage ICBO VCB=20 V, IE=0 Collector Cut off Current VBE(o n) IC=150mA,VCE=1V Base Emitter Voltage VCE(Sat) IC=500mA,IB=50mA Collector Em itter Saturation Voltage hFE IC=150mA,V CE=1V 250 DC Current Gain Dynamic Chara cteristics ft VCE=1V,IC=150mA, 250 Tran sition Frequency Cob VCB=10V, IE=0 Coll ector Out-put Capacitance f=1MHz Cib VE B=0.5V, IC=0 In-put Capacitance f=1MHz hFE CLASSIFICATION D : 250-500; E : 300 -800; F : 600-1200 MARKING CD 655 E UN IT V V V mA A mW deg C www.DataSheet4U .com MAX 1.0 1.0 0.50 1200 30 120 UNI T V V V uA V V MHz pF pF Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U www.DataSheet4U .com 4U.com www.DataSheet4U.com TO-92 Plastic Package B TO-92 Transistors o n Tape and Ammo Pack Amm o Pack Style M EC H AN IC AL D ATA Ad hesive Tape o n Top Side P h A A1 (p) FEE D C arrier Strip A h T 3 2 1 H1 H0 L LA BE L FL AT SIDE 8.2" W2 Wo W1 W t1 K t F1 F P2 Po F2 Do 1 3" 1 .7 7" D 3 E 2 1 ITEM Flat S id e o f Tra nsis to r and Ad hesive Tape V isible 20 00 pcs ./A m m o P ack All dim ensions in m m unless specified otherwise SYM BO L A1 A T P Po SP

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