Flash Memory. EN29LV400B Datasheet

EN29LV400B Memory. Datasheet pdf. Equivalent

Part EN29LV400B
Description 4M Flash Memory
Feature www.DataSheet4U.com EN29LV400 EN29LV400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot.
Manufacture Eon Silicon Solution
Datasheet
Download EN29LV400B Datasheet




EN29LV400B
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EN29LV400
E4dNMa20e9g.LaVbi4t0(0512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
JEDEC Standard program and erase
commands
High performance
- Access times as fast as 45 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
JEDEC standard DATA polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
Flexible Sector Architecture:
triple-metal double-poly triple-well CMOS
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
www.DataSheet4U.comand seven 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
Flash Technology
Low Vcc write inhibit < 2.5V
and seven 32 Kword sectors (word mode)
>100K program/erase endurance cycle
- Supports full chip erase
- Individual sector erase supported
Package Options
- Sector protection:
- 48-pin TSOP (Type 1)
Hardware locking of sectors to prevent
program or erase operations within individual
- 48-ball 6mm x 8mm FBGA
sectors
Commercial and Industrial Temperature
Additionally, temporary Sector Group
Range
Unprotect allows code changes in previously
locked sectors.
GENERAL DESCRIPTION
The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The
EN29LV400 features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2004/03/18
www.DataSheet4U.com



EN29LV400B
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CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard
TSOP
EN29LV400
48 A16
47 BYTE#
46 Vss
45 DQ15/A-1
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 Vcc
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE#
27 Vss
26 CE#
25 A0
FBGA
www.DataSheet4U.comTop View, Balls Facing Down
A6 B6 C6 D6 E6 F6 G6 H6
A13 A12 A14 A15 A16 BYTE# DQ15/A-1 Vss
A5 B5 C5 D5 E5 F5 G5 H5
A9 A8 A10
A4 B4 C4
WE#
RESET#
NC
A3 B3 C3
RY/BY# NC NC
A2 B2 C2
A7 A17
A1 B1
A6
C1
A3 A4
A2
A11
D4
NC
D3
NC
D2
A5
D1
A1
DQ7
E4
DQ14
F4
DQ13
DQ6
G4 H4
DQ5 DQ12 Vcc DQ4
E3 F3 G3 H3
DQ2
DQ10
DQ11
DQ3
E2 F2 G2 H2
DQ0 DQ8 DQ9 DQ1
E1 F1 G1 H1
A0 CE# OE# Vss
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2004/03/18
www.DataSheet4U.com







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