EN29LV400 Datasheet (data sheet) PDF





EN29LV400 Datasheet, 4M Flash Memory

EN29LV400   EN29LV400  

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www.DataSheet4U.com EN29LV400 EN29LV40 0 4 Megabit (512K x 8-bit / 256K x 16-b it) Flash Memory Boot Sector Flash Memo ry, CMOS 3.0 Volt-only FEATURES • 3V, single power supply operation - Full v oltage range: 2.7-3.6 volt read and wri te operations for battery-powered appli cations. - Regulated voltage range: 3.0 -3.6 volt read and write operations and for compatibility with high performanc e 3.3 volt microprocessors. • High pe rformance - Access times as fast as 45 ns • Low power consumption (typical v alues at 5 MHz) - 7 mA typical active r ead current - 15 mA typical program/era se current - 1 µA typical standby curr ent (standard access time to act

EN29LV400 Datasheet, 4M Flash Memory

EN29LV400   EN29LV400  
ive mode) • Flexible Sector Architectu re: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byt e mode) - One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors (w ord mode) - Supports full chip erase - Individual sector erase supported - Sec tor protection: Hardware locking of sec tors to prevent program or erase operat ions within individual sectors Addition ally, temporary Sector Group Unprotect allows code changes in previously locke d sectors. • High performance program /erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Si ngle Sector and Chip Erase • Sector U nprotect Mode • Embedded Erase and Pr ogram Algorithms • Erase Suspend / Re sume modes: Read or program another Sec tor during Erase Suspend Mode • tripl e-metal double-poly triple-well CMOS Fl ash Technology • Low Vcc write inhibi t < 2.5V • Package Options - 48-pin T SOP (Type 1) - 48-ball 6mm x 8mm FBGA Commercial and Industrial Temperatur e Range • >100K program/erase enduran ce cycle da0. www.DataSheet4U.com GE NERAL DESCRIPTION The EN29LV400 is a 4- Megabit, electrically erasable, read/wr ite non-volatile flash memory, organized as 524,288 bytes or 256,144 words. An








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