POWER MOSFET. AP04N70BF-H Datasheet

AP04N70BF-H MOSFET. Datasheet pdf. Equivalent

Part AP04N70BF-H
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature www.DataSheet4U.com AP04N70BF-H Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic.
Manufacture Advanced Power Electronics
Datasheet
Download AP04N70BF-H Datasheet



AP04N70BF-H
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Advanced Power
Electronics Corp.
AP04N70BF-H
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
700V
2.4Ω
4A
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
DS
TO-220FM
The TO-220FM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
www.DataSheet4U.comSymbol
Parameter
Rating
VDS Drain-Source Voltage
700
VGS Gate-Source Voltage
±30
ID@TC=25
Continuous Drain Current, VGS @ 10V
4
ID@TC=100
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
2.5
15
PD@TC=25
Total Power Dissipation
33
Linear Derating Factor
0.26
EAS Single Pulse Avalanche Energy2
100
IAR Avalanche Current
4
EAR Repetitive Avalanche Energy
4
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range -55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.8
65
Units
/W
/W
Data & specifications subject to change without notice
200704051-1/6
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AP04N70BF-H
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AP04N70BF-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=2A
700 -
- 0.6
--
-V
- V/
2.4 Ω
Gate Threshold Voltage
VDS=VGS, ID=250uA
2-
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
VDS=10V, ID=2A
VDS=600V, VGS=0V
VDS=480V,VGS=0V
- 2.5
--
--
Gate-Source Leakage
Total Gate Charge3
VGS=±30V
ID=4A
--
- 16.7
Gate-Source Charge
VDS=480V
- 4.1
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=300V
- 4.9
- 11
Rise Time
ID=4A
- 8.3
Turn-off Delay Time
RG=10Ω,VGS=10V
- 23.8
Fall Time
RD=75Ω
- 8.2
Input Capacitance
VGS=0V
- 950
Output Capacitance
VDS=25V
- 65
www.DataSheet4U.comReverse Transfer Capacitance
f=1.0MHz
-6
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=4A, VGS=0V
Min. Typ. Max. Units
- - 4A
- - 15 A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse width <300us , duty cycle <2%.
2/6
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