AP04N70BF-H Datasheet (data sheet) PDF





AP04N70BF-H Datasheet, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP04N70BF-H   AP04N70BF-H  

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www.DataSheet4U.com AP04N70BF-H Pb Free Plating Product Advanced Power Electr onics Corp. ▼ Dynamic dv/dt Rating Repetitive Avalanche Rated ▼ Fast S witching ▼ Simple Drive Requirement RoHS Compliant N-CHANNEL ENHANCEMEN T MODE POWER MOSFET D BVDSS RDS(ON) I D 700V 2.4Ω 4A G S Description AP04 N70 series are specially designed as ma in switching devices for universal 90~2 65VAC off-line AC/DC converter applicat ions. TO-220FM type provide high blocki ng voltage to overcome voltage surge an d sag in the toughest power system with the best combination of fast switching ,ruggedized design and cost-effectivene ss. The TO-220FM package is universa

AP04N70BF-H Datasheet, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP04N70BF-H   AP04N70BF-H  
lly preferred for all commercialindustri al applications. The device is suited f or switch mode power supplies ,DC-AC co nverters and high current high speed sw itching circuits. G D S TO-220FM Ab solute Maximum Ratings Symbol VDS VGS I D@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ www.DataSheet4U.c om Parameter Rating 700 4 2.5 15 33 0.2 6 2 Units V V A A A W W/ ℃ mJ A mJ ℃ Drain-Source Voltage Gate-Sourc e Voltage ±30 Continuous Drain Curre nt, V GS @ 10V Continuous Drain Current , V GS @ 10V Pulsed Drain Current 1 To tal Power Dissipation Linear Derating F actor Single Pulse Avalanche Energy Ava lanche Current Repetitive Avalanche Ene rgy Storage Temperature Range Operating Junction Temperature Range 100 4 4 -5 5 to 150 -55 to 150 Thermal Data Symbo l Rthj-c Rthj-a Parameter Thermal Resis tance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.8 65 Units ℃/W ℃/W 200704051-1/6 Data & specifications subject to change with out notice www.DataSheet4U www.DataShe et4U.com 4U.com www.DataSheet4U.com A P04N70BF-H Electrical Characteristics@T j=25 C(unless otherwise specified) Symb ol BVDSS ΔBVDSS/ΔTj o Parameter Dra in-Source Breakdown Voltage Test Condi tions VGS=0V, ID=1mA Min. 700 2 - Typ . 0.6 2.5 16.7 4.1 4.9 11 8.3 23.8 8.2 950 65 6 Max. Units 2.4 4 10 1








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