IRFP3703

www.DataSheet4U.com PD - 93917A SMPS MOSFET IRFP3703 HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RDS(on) max 0.0028Ω ID 210A† TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG www.DataSheet4U.com Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 210 † 100 † Units A W W/°C V V/ns °C 1000 230 3.8 1.5 ± 20 5.0 -55 to + 175 Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.65 ––– 40 Units °C/W Typical SMPS Topologies l l Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications Offline High Power AC/DC Convertors using Synchronous Rectification Notes  through † are on page 8 www.irf.com 1 5/18/01 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com IRFP3703 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resis...