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IRFP360LC Dataheets PDF



Part Number IRFP360LC
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFP360LC DatasheetIRFP360LC Datasheet (PDF)

HEXFET® Power MOSFET PD - 9.1230 IRFP360LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased tot.

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HEXFET® Power MOSFET PD - 9.1230 IRFP360LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. VDSS = 400V RDS(on) = 0.20Ω ID = 23A Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max. 23 14 92 280 2.2 ±30 1200 23 28 4.0 -55 to + 150 300 (1.6mm from case) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Min. –––– –––– Typ. –––– 0.24 –––– Max. 0.45 –––– –––– Units °C/W 40 Revision 0 IRFP360LC Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 400 ––– ––– V VGS = 0V, ID = 250µA ––– 0.49 ––– V/°C Reference to 25°C, I D = 1mA ––– ––– 0.20 Ω VGS = 10V, ID = 14A 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 13 ––– ––– S VDS = 50V, ID = 14A ––– ––– 25 µA VDS = 400V, VGS = 0V ––– ––– 250 VDS = 320V, VGS = 0V, TJ = 125°C ––– ––– 100 nA ––– ––– -100 VGS = 20V VGS = -20V ––– ––– 110 ID = 23A ––– ––– 28 nC VDS = 320V ––– ––– 45 VGS = 10V, See Fig. 6 and 13 ––– 16 ––– VDD = 200V ––– 75 ––– ns ID = 23A ––– 42 ––– RG = 4.3Ω ––– 50 ––– RD = 7.9Ω, See Fig. 10 Between lead, ––– 5.0 ––– nH 6mm (0.25in.) from package ––– 13 ––– and center of die contact ––– 3400 ––– VGS = 0V ––– 540 ––– pF VDS = 25V ––– 42 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 23 showing the A integral reverse ––– ––– 92 p-n junction diode. ––– ––– 1.8 V TJ = 25°C, I S = 23A, VGS = 0V ––– 400 600 ns TJ = 25°C, I F = 23A ––– 5.7 8.6 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25°C, L = 4.0mH RG = 25Ω, IAS = 23A. (See Figure 12) ISD ≤ 23A, di/dt ≤ 170A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. IRFP360LC ID , Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 4.5V 0.1 0.1 20µs PULSE WIDTH TC = 25°C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TC = 25oC 1000 100 TJ = 150°C 10 TJ = 25°C 1 V DS = 50V 20µs PU LS E W ID TH 0.1 4 5 6 7 8 9 10 VGS , Gate-to-Source V oltage (V) Fig 3. Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain-to-.


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