Document
HEXFET® Power MOSFET
PD - 9.1230
IRFP360LC
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
VDSS = 400V RDS(on) = 0.20Ω ID = 23A
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Max. 23 14 92 280 2.2 ±30 1200 23 28 4.0
-55 to + 150
300 (1.6mm from case) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V mJ A mJ V/ns
°C
Min. –––– ––––
Typ. –––– 0.24 ––––
Max. 0.45 –––– ––––
Units
°C/W 40
Revision 0
IRFP360LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON) VGS(th)
Static Drain-to-Source On-Resistance Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
400 ––– ––– V VGS = 0V, ID = 250µA
––– 0.49 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.20 Ω VGS = 10V, ID = 14A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
13 ––– ––– S VDS = 50V, ID = 14A
––– ––– 25 µA VDS = 400V, VGS = 0V
––– ––– 250
VDS = 320V, VGS = 0V, TJ = 125°C
––– ––– 100 nA
––– ––– -100
VGS = 20V VGS = -20V
––– ––– 110
ID = 23A
––– ––– 28 nC VDS = 320V
––– ––– 45
VGS = 10V, See Fig. 6 and 13
––– 16 –––
VDD = 200V
––– 75 ––– ns ID = 23A
––– 42 –––
RG = 4.3Ω
––– 50 –––
RD = 7.9Ω, See Fig. 10
Between lead,
––– 5.0 –––
nH 6mm (0.25in.)
from package
––– 13 –––
and center of die contact
––– 3400 –––
VGS = 0V
––– 540 ––– pF VDS = 25V
––– 42 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 23
showing the
A
integral reverse
––– ––– 92
p-n junction diode.
––– ––– 1.8 V TJ = 25°C, I S = 23A, VGS = 0V ––– 400 600 ns TJ = 25°C, I F = 23A ––– 5.7 8.6 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 4.0mH RG = 25Ω, IAS = 23A. (See Figure 12)
ISD ≤ 23A, di/dt ≤ 170A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRFP360LC
ID , Drain-to-Source Current (A)
1000 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1 0.1
20µs PULSE WIDTH TC = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TC = 25oC
1000
100
TJ = 150°C
10
TJ = 25°C
1
V DS = 50V 20µs PU LS E W ID TH
0.1
4
5
6
7
8
9
10
VGS , Gate-to-Source V oltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID , Drain-to-.