Power MOSFET. IRFP360LC Datasheet

IRFP360LC MOSFET. Datasheet pdf. Equivalent


International Rectifier IRFP360LC
HEXFET® Power MOSFET
PD - 9.1230
IRFP360LC
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
VDSS = 400V
RDS(on) = 0.20
ID = 23A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
23
14
92
280
2.2
±30
1200
23
28
4.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
––––
Units
°C/W
40
Revision 0


IRFP360LC Datasheet
Recommendation IRFP360LC Datasheet
Part IRFP360LC
Description Power MOSFET
Feature IRFP360LC; HEXFET® Power MOSFET PD - 9.1230 IRFP360LC Ultra Low Gate Charge Reduced Gate Drive Requirement En.
Manufacture International Rectifier
Datasheet
Download IRFP360LC Datasheet




International Rectifier IRFP360LC
IRFP360LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
400 ––– ––– V VGS = 0V, ID = 250µA
––– 0.49 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.20 VGS = 10V, ID = 14A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
13 ––– ––– S VDS = 50V, ID = 14A
––– ––– 25 µA VDS = 400V, VGS = 0V
––– ––– 250
VDS = 320V, VGS = 0V, TJ = 125°C
––– ––– 100
nA
––– ––– -100
VGS = 20V
VGS = -20V
––– ––– 110
ID = 23A
––– ––– 28 nC VDS = 320V
––– ––– 45
VGS = 10V, See Fig. 6 and 13
––– 16 –––
VDD = 200V
––– 75 ––– ns ID = 23A
––– 42 –––
RG = 4.3
––– 50 –––
RD = 7.9Ω, See Fig. 10
Between lead,
––– 5.0 –––
nH 6mm (0.25in.)
from package
––– 13 –––
and center of die contact
––– 3400 –––
VGS = 0V
––– 540 ––– pF VDS = 25V
––– 42 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 23
showing the
A
integral reverse
––– ––– 92
p-n junction diode.
––– ––– 1.8 V TJ = 25°C, I S = 23A, VGS = 0V
––– 400 600 ns TJ = 25°C, I F = 23A
––– 5.7 8.6 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 4.0mH
RG = 25, IAS = 23A. (See Figure 12)
ISD 23A, di/dt 170A/µs, V DD V(BR)DSS,
TJ 150°C
Pulse width 300µs; duty cycle 2%.



International Rectifier IRFP360LC
IRFP360LC
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TC = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
1000
100
TJ = 150°C
10
TJ = 25°C
1
V DS = 50V
20µs PU LS E W ID TH
0.1
4
5
6
7
8
9
10
VGS , Gate-to-Source V oltage (V)
Fig 3. Typical Transfer Characteristics
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
TC = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics,
TC = 150oC
3.0
ID = 23A
2.5
2.0
1.5
1.0
0.5
0.0
-60
VGS = 10V
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature







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