IRFP350A

www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) 1 IRFP350A BVDSS = 400 V RDS(on) = 0.3Ω ID = 17 A TO-3P 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (2) (1) (1) (1) Value 400 17 10.8 68 ±30 1156 17 20.2 4.0 202 Units V A A V mJ A mJ V/ns W W/°C www.DataSheet4U.com (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds 1.61 - 55 to +150 °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.62 -40 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com IRFP350A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Dra...