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IRFP32N50K

International Rectifier

Power MOSFET

www.DataSheet4U.com PD - 94099A IRFP32N50K SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptibl...


International Rectifier

IRFP32N50K

File Download Download IRFP32N50K Datasheet


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www.DataSheet4U.com PD - 94099A IRFP32N50K SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG HEXFET® Power MOSFET VDSS 500V RDS(on)typ. 0.135Ω ID 32A TO-247AC www.DataSheet4U.com Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw 32 20 130 460 3.7 ± 30 13 -55 to + 150 300 Units A W W/°C V V/ns °C 10lb*in (1.1N*m) Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 450 32 46 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.26 ––– 40 Units °C/W www.irf.com 1 05/24/01 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com IRFP...




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