Power MOSFET
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PD - 94099A
IRFP32N50K
SMPS MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptibl...
Description
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PD - 94099A
IRFP32N50K
SMPS MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
HEXFET® Power MOSFET
VDSS
500V
RDS(on)typ.
0.135Ω
ID
32A
TO-247AC
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Parameter Max.
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw 32 20 130 460 3.7 ± 30 13 -55 to + 150 300
Units
A W W/°C V V/ns
°C 10lb*in (1.1N*m)
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
450 32 46
Units
mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.24 –––
Max.
0.26 ––– 40
Units
°C/W
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1
05/24/01
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