Document
www.DataSheet4U.com
MITSUBISHI IGBT MODULES
CM150DY-24NF
HIGH POWER SWITCHING USE
CM150DY-24NF
¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack
APPLICATION General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
www.DataSheet4U.com
Tc measured point (Base plate) 94 17 23 23 17
C2E1
E2
C1
E2 G2
4
G1 E1
12 2-φ6.5 MOUNTING HOLES
12 80±0.25
12
4
3-M5 NUTS
20 (14)
48
13
18
4
TAB #110. t=0.5 16 7 16 7 16
7.5 E2 G2
C2E1
E2
C1
G1 E1
29 +1.0 –0.5
LABEL
21.2
CIRCUIT DIAGRAM
Jul.2004
DataSheet 4 U .com
www.DataSheet4U www.DataSheet4U.com 4U.com
www.DataSheet4U.com
MITSUBISHI IGBT MODULES
CM150DY-24NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 110°C*3 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 150 300 150 300 780 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C V N•m N•m g
(Note 2) (Note 2)
Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 150A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V Min. — 6 — — — — — — — — — — — — — — — — — — 2.1 Limits Typ. — 7 — 1.8 2.0 — — — 1000 — — — — — 7.5 — — — 0.07 — — Max. 1 8 0.5 2.5 — 35 3 0.68 — 120 80 450 350 150 — 3.2 0.16 0.25 — 0.093*3 21 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω
www.DataSheet4U.com
VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE1 = VGE2 = 15V RG = 2.1Ω, Inductive load switching operation IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips
*1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C.
Jul.2004
DataSheet 4 U .com
www.DataSheet4U www.DataSheet4U.com 4U.com
www.DataSheet4U.com
MITSUBISHI IGBT MODULES
CM150DY-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
300 250
VGE = 20V 12
15 13
Tj = 25°C
4
VGE = 15V
3
200 150 100
11
2
10 50 9 0 0 2 4 6 8 10
1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
7
10
Tj = 25°C
EMITTER CURRENT IE (A)
8
5 3 2
6
www.DataSheet4U.com
102
7 5 3 2
4
IC = 150A IC = 300A IC = 60A
2
Tj = 25°C Tj = 125°C 0 1 2 3 4 5
0
6
8
10
12
14
16
18
20
101
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies
SWITCHING TIME (ns)
7 5 3 2
tf td(off)
101
7 5 3 2
102
7 5 3 2
td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load
2 3 5 7 102 2 3 5 7 103
Coes
100
7 5 3 2
101
7 5 3 2
Cres
VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 1 10
COLLECTOR CURRENT IC (A)
Jul.2004
DataSheet 4 U .com
www.DataSheet4U www.DataSheet4U.com 4U.com
www.DataSheet4U.com
MITSUBISHI IGBT MODULES
CM150DY-24NF
HIGH POWER SWITCHING USE
R.