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CM150DY-24A Dataheets PDF



Part Number CM150DY-24A
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description IGBT MODULES
Datasheet CM150DY-24A DatasheetCM150DY-24A Datasheet (PDF)

CM150DY-24A MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE ¡IC .. 150A ¡VCES .. 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 20 (14) 4 18 4 E2 G2 13 48 G1 E1 2-φ6.5 MOUNTING HOLES 29 +1.0 –0.5 12 12 12 80±0.25 16 7 16.

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CM150DY-24A MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE ¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 20 (14) 4 18 4 E2 G2 13 48 G1 E1 2-φ6.5 MOUNTING HOLES 29 +1.0 –0.5 12 12 12 80±0.25 16 7 16 7 16 LABEL 3-M5 NUTS 4 12.5 (SCREWING DEPTH) TAB #110. t=0.5 C2E1 E2 C1 21.2 7.5 CIRCUIT DIAGRAM E2 G2 G1 E1 Feb. 2009 1 MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC = 81°C*1 Pulse Pulse TC = 25°C*1 Conditions (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings 1200 ±20 150 300 150 300 960 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V Tj = 25°C Tj = 125°C VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 Min. — 6 — — — — — — — — — — — — — — — — — 2.1 Limits Typ. — 7 — 2.1 2.4 — — — 675 — — — — — 6.0 — — — 0.022 — *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Max. 1 8 0.5 3.0 — 23 2 0.45 — 130 100 450 350 150 — 3.8 0.13 0.23 — 31 Unit mA V µA V nF nC ns ns µC V K/W Ω Feb. 2009 2 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 VGE = 20V 250 15 Tj = 25°C 13 12 200 COLLECTOR CURRENT IC (A) 150 11 100 50 10 9 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 8 6 4 IC = 300A IC = 150A 2 IC = 60A 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 7 5 3 2 Cies 101 7 5 3 2 100 7 5 3 2 VGE = 0V 10–110–1 2 3 5 7 100 2 3 Coes Cres 5 7 101 2 3 5 7102 COLLECTOR-EMITTER VOLTAGE VCE (V) 3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIME (ns) EMITTER CURRENT IE (A) MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 4 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 COLLECTOR CURRENT IC (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C 101 012345 EMITTER-COLLECTOR VOLTAGE VEC (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 tf 3 2 td(off) 102 7 5 td(on) 3 tr 2 101 7 5 3 2 1010 01 23 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101101 23 Irr 5 7 102 trr Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 2 3 5 7 103 EMITTER CURRENT IE (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–11 01 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Esw(off) Esw(on) 23 Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load C snub.


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