Document
CM150DY-24A
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack
APPLICATION AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
17 23
23
17
C2E1
E2
C1
20 (14)
4 18 4
E2 G2
13
48
G1 E1
2-φ6.5 MOUNTING HOLES
29
+1.0 –0.5
12 12 12 80±0.25
16 7 16 7 16 LABEL
3-M5 NUTS
4 12.5 (SCREWING DEPTH)
TAB #110. t=0.5
C2E1
E2
C1
21.2 7.5
CIRCUIT DIAGRAM
E2 G2
G1 E1
Feb. 2009 1
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso
— — —
Parameter Collector-emitter voltage Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation Junction temperature Storage temperature Isolation voltage
Torque strength
Weight
G-E Short C-E Short DC, TC = 81°C*1 Pulse
Pulse TC = 25°C*1
Conditions
(Note 2) (Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value
Ratings 1200 ±20 150 300 150 300 960
–40 ~ +150 –40 ~ +125
2500 2.5 ~ 3.5 3.5 ~ 4.5
310
Unit V V
A
A
W °C °C Vrms
N•m g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
ICES
VGE(th)
IGES
VCE(sat)
Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG
Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage
Thermal resistance
Contact thermal resistance External gate resistance
VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V
VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V
Tj = 25°C Tj = 125°C
VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A
IE = 150A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2
Min. —
6
— — — — — — — — — — — — — — — — — 2.1
Limits Typ. —
7
— 2.1 2.4 — — — 675 — — — — — 6.0 — — — 0.022 —
*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C.
Max. 1
8
0.5 3.0 — 23 2 0.45 — 130 100 450 350 150 — 3.8 0.13 0.23 — 31
Unit mA V µA V
nF
nC
ns
ns µC V
K/W Ω
Feb. 2009 2
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
300 VGE = 20V
250
15 Tj = 25°C 13
12
200
COLLECTOR CURRENT IC (A)
150 11
100
50 10 9
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 Tj = 25°C
8
6
4 IC = 300A IC = 150A
2 IC = 60A
0 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE Cies, Coes, Cres (nF)
CAPACITANCE–VCE CHARACTERISTICS
(TYPICAL)
102 7 5
3 2 Cies
101 7 5
3 2
100 7 5
3 2
VGE = 0V 10–110–1 2 3 5 7 100 2 3
Coes
Cres 5 7 101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIME (ns)
EMITTER CURRENT IE (A)
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
4 VGE = 15V
3
2
1 Tj = 25°C Tj = 125°C
0 0 50 100 150 200 250 300
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS
(TYPICAL) 103
7 5
3 2
102 7 5
3 2 Tj = 25°C
Tj = 125°C 101
012345
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103 7
5 tf 3
2 td(off)
102
7 5
td(on)
3 tr
2
101 7 5 3 2
1010 01
23
5 7 102
Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
Feb. 2009
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
RECOVERY LOSS (mJ/pulse)
SWITCHING LOSS (mJ/pulse)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
103
7
5
3 2
102 7 5 3 2
101101
23
Irr
5 7 102
trr
Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
102 7 5
3 2
101 7 5
3 2
100 7 5
3 2
10–11 01
SWITCHING LOSS vs. COLLECTOR CURRENT
(TYPICAL)
Esw(off)
Esw(on)
23
Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load C snub.