www.DataSheet4U.com
Ordering number : ENN7417
2SC5933
NPN Triple Diffused Planar Silicon Transistor
2SC5933
Ultrahigh...
www.DataSheet4U.com
Ordering number : ENN7417
2SC5933
NPN Triple Diffused Planar Silicon
Transistor
2SC5933
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
Package Dimensions
unit : mm 2048B
[2SC5933]
6.0
20.0 3.3 5.0
High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process.
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
5.45
5.45
www.DataSheet4U.com
Ratings 1600 800 5 25 50 3.5 180 150 --55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1600V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably ex...