CL100S

www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN/PNP SILICON PLANAR TRANSISTORS CL100S NPN CK100S PNP TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCEO 50 Collector -Emitter Voltage VCBO 60 Collector -Base Voltage VEBO 5.0 Emitter Base Voltage ICM 1.0 Collector Current PD 800 Power Dissipation @ Ta=25 deg C 5.33 Derate Above 25 deg C PD 3.0 Power Dissipation @ Tc=25 deg C 20 Derate Above 25 deg C Tj, Tstg -55 to +175 Operating & Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN VCEO IC=1mA, IB=0 50 Collector -Emitter Voltage VCBO IC=100uA, IE=0 60 Collector -Base Voltage VEBO IE=100uA, IC=0 5.0 Emitter Base Voltage ICBO VCB=40V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current hFE* 2mA, VCE=5V 20 DC Current Gain VCE(sat)* IC=150mA, IB=15mA Collector -Emitter (sat) Voltage *Pulse Condition : Pulse Width =300us, Duty Cycle=2% TYP - MAX 1.0 1.0 0.60 UNIT V V V uA uA V ww.DataSheet4U.com Continental Device India Limited www.DataSheet4U.com Data Sheet Page 1 of 2 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSHeet4U.com UNIT V V V A mW mW/deg C W mW/deg C deg C www.DataSheet4U.com TO-39 Metal Can Package A B D G 2 1 3 All dimensions are in mm DIM A B C D E F G H J K L M IN MAX 8.50 9.39 7....