HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 15N100Q IXFK 15N10...
Description
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q
VDSS = 1000 V
ID25
=
15 A
RDS(on) =
0.7 Ω
trr ≤ 250 ns
Preliminary data sheet
TO-247 AD (IXFH)
Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
T C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
15
A
60
A
15
A
45
mJ
1.5
J
5
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Mounting torque
TO-247 TO-264
TO-247 TO-268 TO-264
1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in.
6
g
4
g
10
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA
V GS
=
±20
V, DC
V DS
=
0
VDS = VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000 3.0
V 5.0 V
±200 nA 50 µA 2 mA
0.7 Ω
TO-268 (D3) ( IXFT)
G S
TO-264 AA (IXFK)
(TAB)
G D S
D (TAB)
G = Gate S = Source
TAB = Drain
Features
z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability
classification z ...
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