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SB61L256B

Silicon-Based Technology

Static CMOS RAM

www.DataSheet4U.com SB61L256B Silicon-Based Technology Ultra High Speed and Low Power Memory 32,768 x 8-Bits STATIC C...


Silicon-Based Technology

SB61L256B

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www.DataSheet4U.com SB61L256B Silicon-Based Technology Ultra High Speed and Low Power Memory 32,768 x 8-Bits STATIC CMOS RAM PRELIMINARY Description: The SB61L256B series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and special polyload 4-transistor memory cells, the SB61L256B series products exhibit very high-speed performance with single +3.3-volt power supply while requiring very low power and no clock or refreshing to operate. The SB61L256B is packed in a standard 28-pin 300mil SOJ. Features: 32,768-word x 8-bit organization Single +3.3-volt power supply no clock or refreshing required Fully static operation LVTTL-compatible inputs and outputs Common I/O capability Low power consumption Active: 130/120/110 mA(Max.) Standby: 2 mA Very high speed access: 6.5/7/8 ns(Max.) 28-pin plastic 300 mil SOJ package Output Enable( OE )available for very fast access Ordering Information: Access Time ns(Max.) 6.5 28-Pin Plastic SOJ (300 mil) SB61L256B-8 8 110 32K× 8 bits 7 3.3V± 5% Supply Voltage (Typ.) Supply Current mA (Max.) Operating 130 120 2 Standby Part Number Package Word Organization SB61L256B-6.5 SB61L256B-7 ww.DataSheet4U.com The information in this document is subject to change without notice SBT Silicon-Based Technology Corporation 1F,No.23, R&D Rd.I, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C. Tel:886-35-777897 Fax:886-35-779832 -1...




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