B772P

www.DataSheet4U.com www.DataSheet4U.com DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 3.8 ±0.2 2.8 MAX. FEATURES Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 ±0.2 13.0 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipation 1.0 W Total Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) Collector to Base Voltage −40 V VCBO Collector to Emitter Voltage −30 V VCEO Emitter to Base Voltage −5.0 V VEBO Collector Current (DC) −3.0 A IC(DC) IC(pulse)Note Collector Current (pulse) −7.0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% 12 TYP. 0.55 +0.08 –0.05 0.8 +0.08 –0.05 1.2 TYP. 2.3 TYP. 2.3 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Output Capacitance Collector Cutoff Current SYMBOL hFE1 hFE2 fT Cob ICBO I...