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DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
...
www.DataSheet4U.com
www.DataSheet4U.com
DATA SHEET
PNP SILICON POWER
TRANSISTOR
2SB772
PNP SILICON POWER
TRANSISTOR
DESCRIPTION
The 2SB772 is
PNP silicon
transistor suited for the output stage of 3 W audio amplifier, voltage
regulator, DC-DC converter and relay driver.
PACKAGE DRAWING (Unit: mm)
8.5 MAX. 3.2 ±0.2
3.8 ±0.2
2.8 MAX.
FEATURES
Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.
12.0 MAX. 2.5 ±0.2 13.0 MIN.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipation 1.0 W Total Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) Collector to Base Voltage −40 V VCBO Collector to Emitter Voltage −30 V VCEO Emitter to Base Voltage −5.0 V VEBO Collector Current (DC) −3.0 A IC(DC) IC(pulse)Note Collector Current (pulse) −7.0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
12 TYP.
0.55 +0.08 –0.05
0.8 +0.08 –0.05
1.2 TYP. 2.3 TYP.
2.3 TYP.
1: Emitter 2: Collector: connected to mounting plane 3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Output Capacitance Collector Cutoff Current SYMBOL hFE1 hFE2 fT Cob ICBO I...