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IR2110C Dataheets PDF



Part Number IR2110C
Manufacturers International Rectifier
Logo International Rectifier
Description (IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form
Datasheet IR2110C DatasheetIR2110C Datasheet (PDF)

www.DataSheet4U.com Data Sheet No. PD65001 IR2110C/IR2113C HIGH AND LOW SIDE DRIVER IN DIE WAFER FORM Features • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operational to +500V or +600V • CMOS Schmitt-triggered inputs with pull-down Tolerant to negative transient voltage • Cycle by cycle edge-triggere.

  IR2110C   IR2110C



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www.DataSheet4U.com Data Sheet No. PD65001 IR2110C/IR2113C HIGH AND LOW SIDE DRIVER IN DIE WAFER FORM Features • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operational to +500V or +600V • CMOS Schmitt-triggered inputs with pull-down Tolerant to negative transient voltage • Cycle by cycle edge-triggered shutdown logic dV/dt immune • Matched propagation delay for both channels • Gate drive supply range from 10 to 20V • Outputs in phase with inputs • Undervoltage lockout for both channels Typical Connection www.DataSHeet4U.com up to 500V or 600V HO VDD HIN SD LIN V SS VCC VDD HIN SD LIN VSS VCC COM LO VB VS TO LOAD (Refer to the Die Outlines for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. ww.DataSheet4U.com Note: c This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional performance guarantee.The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however, customer’s results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can be purchased as known good die. d Part number shown is for die in wafer. Contact factory for these other options. www.irf.com 1 www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSheet4U.com IR2110C/IR2113C Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construct.


K1012 IR2110C IR2113C


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