PHM15NQ20T

www.DataSheet4U.com PHM15NQ20T TrenchMOS™ standard level FET Rev. 03 — 11 September 2003 M3D879 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3 Applications s DC-to-DC primary side s Portable appliances. www.DataSHeet4U.com Symbol 1 4 d g s MBB076 1.4 Quick reference data s VDS ≤ 200 V s Ptot ≤ 62.5 W s ID ≤ 17.5 A s RDSon ≤ 80 mΩ. 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685-1 (QLPAK), simplified outline and symbol Description source (s) gate (g) drain (d) mounting base, connected to drain (d) mb [1] Simplified outline ww.DataSheet4U.com 8 Bottom view 5 MBL585 SOT685-1 (QLPAK) [1] Shaded area indicates pin 1 identifier. www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors PHM15NQ20T TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHM15NQ20T QLPAK Description Plastic surface mounted package; no leads; 8 terminals. Version SOT685 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak...