PHM8001

www.DataSheet4U.com MOSFET MODULE FEATURES * Trench Gate MOS FET Module Single 800A /150V OUTLINE DRAWING PHM8001 * Super Low Rds(ON) 1.4 milliohms( @800A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 650g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR M4 M8 PHM8001 150 +/ - 20 800 (Tc=25°C) 640 (Tc=25°C) 1,600 Tc=25°C) 2,650 Tc=25°C) -40 to +150 -40 to +125 2,500 3.0 1.4 10.5 Unit V V A Nm ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate-Source Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Rise Time Turn-On Delay Time Fall Time Turn-Off Delay Time IDSS IGSS VGS(th) rDS(on) VDS(on) gfs Cies Coss Crss tr td(on) VDS=VDSS,VGS=0V VGS=+/- 20V,VDS=0V VDS=VGS, ID=16mA VGS=10V, ID=800A VGS=10V, ID=800A VDS=15V, ID=800A VDS=10V,VGS=0V,f=1MHz VDD= 80V ID=400A VGS= -5V, +10V RG= 0.75 ohm Min. 1.0 - Typ. 2.0 1.15 1.10 165 20 20 500 880 180 1,300 Max. 4.8 4.8 3.2 1.4 1.25 - Unit mA µA V m-ohm V S nF nF nF ns ww.DataSheet4U.com tf td(off) FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Continuous Source Cu...