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MRF859 Dataheets PDF



Part Number MRF859
Manufacturers Motorola
Logo Motorola
Description NPN SILICON RF POWER TRANSISTOR
Datasheet MRF859 DatasheetMRF859 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF859/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB • Characterized with.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF859/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power • Will Withstand RF Input Overdrive of 2 W CW • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit Board Photomaster Available by Ordering Document MRF859PHT/D from Motorola Literature Distribution. MRF859 MRF859S CLASS A 800 – 960 MHz 6.5 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 319–07, STYLE 2 MRF859 CASE 319A–02, STYLE 2 MRF859S MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 60°C Derate above 60°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 55 4 34 0.24 200 – 65 to +150 Unit Vdc Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance (TJ = 150°C, TC = 60°C) Symbol RθJC Max 3.9 Unit °C/W ELECTRICAL CHARACTERISTICS ww.DataSheet4U.com Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) Collector Cutoff Current (VCB = 15 V, IE = 0) Teflon is a registered trademark of du Pont de Nemours & Co., Inc. Symbol Min Typ Max Unit V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 28 55 55 4 — 32 75 75 5 — — — — — 2 Vdc Vdc Vdc Vdc mA (continued) REV 2 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1995 www.DataSheet4U.com MRF859 MRF859S 1 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSHeet4U.com www.DataSheet4U.com ELECTRICAL CHARACTERISTICS — continued Characteristic ON CHARACTERISTICS DC Current Gain (IC = 1 A, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common–Emitter Power Gain (VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W) Load Mismatch (VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W, Load VSWR = 30:1, All Phase Angles) RF Input Overdrive (VCE = 24 V, IC = 0.9 A, f = 840 MHz) No degradation Third Order Intercept Point (VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = –40 dBc) Noise Figure (VCE = 24 V, IC = 0.9 A, f = 900 MHz) Input Return Loss (VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W) Pg ψ 11.5 13 — dB Cob 13 — 26 pF hFE 20 60 120 — Symbol Min Typ Max Unit No Degradation in Output Power — — 2 W Pin(over) ITO + 47 + 48 — dBm NF IRL — — 6 — — –9 dB dB Table 1. Common Emitter S–Parameters VCE (V) 24 IC (A) 0.9 f (MHz) 800 820 840 860 880 900 920 940 960 S11 |S11| 0.906 0.902 0.897 0.894 0.893 0.893 0.894 0.897 0.903 ∠φ 170 170 171 171 171 171 172 172 172 |S21| 1.022 1.022 1.018 1.012 1.005 0.988 0.962 0.924 0.884 S21 ∠φ 12 7 3 –3 –8 – 14 – 20 – 26 – 32 |S12| 0.016 0.015 0.013 0.011 0.009 0.007 0.005 0.008 0.004 S12 ∠φ 11 8 6 4 3 5 14 47 102 |S22| 0.804 0.823 0.845 0.870 0.895 0.920 0.946 0.969 0.987 S22 ∠φ – 168 – 167 – 167 – 167 – 168 – 168 – 169 – 170 – 172 Table 2. Zin and ZOL* versus Frequency f (MHz) Zin (Ohms) 1.6 1.5 2.2 3.3 3.6 3.5 VCE = 24 V, IC = 0.9 A, Po = 6.5 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. 2 1.6 1.7 ZOL* (Ohms) – 4.1 – 3.3 – 2.7 ww.DataSheet4U.com 840 870 900 MRF859 MRF859S 2 www.DataSheet4U.com MOTOROLA RF DEVICE DATA DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSHeet4U.com www.DataSheet4U.com + R1 R8 F1 VCE V SUPPLY C1 R2 Q1 Q2 R3 R4 R5 R7 + R6 B1 B2 C16 L1 L2 TL1 C8 C9 DUT TL4 C15 TL5 OUTPUT C12 C10 C11 C13 C14 C7 C5 + C6 C2 C3 C4 L3 INPUT TL2 TL3 SB1 0.880″ B1, B2 C1 C2, C5 C3, C6 C4 C7, C16 C8, C15 C9, C10 C11 C12, C13, C14 F1 L1, L2 L3 Q1 Q2 Ferrite Bead, Ferroxcube (56–390–65/3B) 250 µF, 50 Vdc, Electrolytic Capacitor 10 µF, 50 Vdc, Electrolytic Capacitor 0.1 µF, Chip Capacitor 1000 pF, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 6.8 pF, Mini–Unelco 18 pF, Mini–Unelco 0.8 – 8.0 pF, Johanson Gigatrim 3 Amp Micro–Fuse 3 Turns, 18 AWG, 0.170″ ID 12 Turns, 22 AWG, 0.150″ ID (10 Ω 1/2 W Resistor) MMBT2222ALT1, NPN Transistor BD136, PNP Transistor ww.DataSheet4U.com R1 R2 R3 R4 R5 R6 R7 R8 SB1 TL1, TL5 TL2 TL3 TL4 Board V Supply VCE 470 Ω, 1/.


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