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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power • Will Withstand RF Input Overdrive of 2 W CW • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit Board Photomaster Available by Ordering Document MRF859PHT/D from Motorola Literature Distribution.
MRF859 MRF859S
CLASS A 800 – 960 MHz 6.5 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR
CASE 319–07, STYLE 2 MRF859
CASE 319A–02, STYLE 2 MRF859S
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 60°C Derate above 60°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 55 4 34 0.24 200 – 65 to +150 Unit Vdc Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance (TJ = 150°C, TC = 60°C) Symbol RθJC Max 3.9 Unit °C/W
ELECTRICAL CHARACTERISTICS
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Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) Collector Cutoff Current (VCB = 15 V, IE = 0) Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Symbol
Min
Typ
Max
Unit
V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES
28 55 55 4 —
32 75 75 5 —
— — — — 2
Vdc Vdc Vdc Vdc mA (continued)
REV 2
MOTOROLA RF DEVICE DATA © Motorola, Inc. 1995
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MRF859 MRF859S 1
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ELECTRICAL CHARACTERISTICS — continued
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 1 A, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common–Emitter Power Gain (VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W) Load Mismatch (VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W, Load VSWR = 30:1, All Phase Angles) RF Input Overdrive (VCE = 24 V, IC = 0.9 A, f = 840 MHz) No degradation Third Order Intercept Point (VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = –40 dBc) Noise Figure (VCE = 24 V, IC = 0.9 A, f = 900 MHz) Input Return Loss (VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W) Pg ψ 11.5 13 — dB Cob 13 — 26 pF hFE 20 60 120 — Symbol Min Typ Max Unit
No Degradation in Output Power — — 2 W
Pin(over)
ITO
+ 47
+ 48
—
dBm
NF IRL
— —
6 —
— –9
dB dB
Table 1. Common Emitter S–Parameters
VCE (V) 24 IC (A) 0.9 f (MHz) 800 820 840 860 880 900 920 940 960 S11 |S11| 0.906 0.902 0.897 0.894 0.893 0.893 0.894 0.897 0.903 ∠φ 170 170 171 171 171 171 172 172 172 |S21| 1.022 1.022 1.018 1.012 1.005 0.988 0.962 0.924 0.884 S21 ∠φ 12 7 3 –3 –8 – 14 – 20 – 26 – 32 |S12| 0.016 0.015 0.013 0.011 0.009 0.007 0.005 0.008 0.004 S12 ∠φ 11 8 6 4 3 5 14 47 102 |S22| 0.804 0.823 0.845 0.870 0.895 0.920 0.946 0.969 0.987 S22 ∠φ – 168 – 167 – 167 – 167 – 168 – 168 – 169 – 170 – 172
Table 2. Zin and ZOL* versus Frequency
f (MHz) Zin (Ohms) 1.6 1.5 2.2 3.3 3.6 3.5 VCE = 24 V, IC = 0.9 A, Po = 6.5 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. 2 1.6 1.7 ZOL* (Ohms) – 4.1 – 3.3 – 2.7
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840 870 900
MRF859 MRF859S 2
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MOTOROLA RF DEVICE DATA
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+ R1 R8 F1 VCE
V SUPPLY C1
R2
Q1 Q2
R3
R4 R5 R7 + R6 B1 B2 C16 L1 L2 TL1 C8 C9 DUT TL4 C15 TL5 OUTPUT C12 C10 C11 C13 C14 C7 C5 + C6 C2 C3 C4 L3
INPUT
TL2 TL3 SB1
0.880″
B1, B2 C1 C2, C5 C3, C6 C4 C7, C16 C8, C15 C9, C10 C11 C12, C13, C14 F1 L1, L2 L3 Q1 Q2
Ferrite Bead, Ferroxcube (56–390–65/3B) 250 µF, 50 Vdc, Electrolytic Capacitor 10 µF, 50 Vdc, Electrolytic Capacitor 0.1 µF, Chip Capacitor 1000 pF, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 6.8 pF, Mini–Unelco 18 pF, Mini–Unelco 0.8 – 8.0 pF, Johanson Gigatrim 3 Amp Micro–Fuse 3 Turns, 18 AWG, 0.170″ ID 12 Turns, 22 AWG, 0.150″ ID (10 Ω 1/2 W Resistor) MMBT2222ALT1, NPN Transistor BD136, PNP Transistor
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R1 R2 R3 R4 R5 R6 R7 R8 SB1 TL1, TL5 TL2 TL3 TL4 Board V Supply VCE
470 Ω, 1/.