MRF859S

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF859/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power Will Withstand RF Input Overdrive of 2 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit Board Photomaster Available by Ordering Document MRF859PHT/D from Motorola Literature Distribution. MRF859 MRF859S CLASS A 800 – 960 MHz 6.5 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 319–07, STYLE 2 MRF859 CASE 319A–02, STYLE 2 MRF859S MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 60°C Derate above 60°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 55 4 34 0.24 200 – 65 to +150 Unit Vdc Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance...