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MRF890 Dataheets PDF



Part Number MRF890
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet MRF890 DatasheetMRF890 Datasheet (PDF)

www.DataSheet4U.com MRF890 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .205 4L STUD C E E FEATURES: • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz • Omnigold™ Metalization System B MAXIMUM RATINGS VCBO VCER VEBO PDISS TJ TSTG θJC 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W ° CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hF.

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www.DataSheet4U.com MRF890 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .205 4L STUD C E E FEATURES: • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz • Omnigold™ Metalization System B MAXIMUM RATINGS VCBO VCER VEBO PDISS TJ TSTG θJC 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W ° CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 24 V POUT = 2.0 V IC = 100 mA f = 1.0 MHz f = 900 MHz MINIMUM TYPICAL MAXIMUM 30 55 4.0 500 10 100 2.0 9.0 55 UNITS V V V µA --pF dB % ww.DataSheet4U.com A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 REV. A www.DataSheet4U.com 1/1 Specifications are subject to change without notice. DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSHeet4U.com IC 0.5 A .


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