MRF891S

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF891/D The RF Line NPN Silicon RF Power Transistors . . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800 – 960 MHz. Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Gain = 9.0 dB Min Efficiency = 50% Min Series Equivalent Large–Signal Characterization Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output Power and Supply Voltage Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 50°C (1) Derate above 50°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Value 30 55 4.0 0.6 18 0.143 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF891 MRF891S 5.0 W, 900 MHz RF POWER TRANSISTORS NPN SILICON CASE 319–07, STYLE 2 MRF891 CASE 319A–02, STYLE 2 MRF891S THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 7.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC ...