MRF897R

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF897R/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800– 970 MHz. Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10.5 dB @ 900 MHz, class–AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP) Characterized with Series Equivalent Large–Signal Parameters from 800 to 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal– Migration Circuit Board Photomaster Available by Ordering Document MRF897RPHT/D from Motorola Literature Distribution. MRF897R 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 395B–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 30 60 4.0 4.0 105 0.60 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Max 1.67 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C un...