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C3355 Datasheet, Equivalent, 2SC3355.

2SC3355

2SC3355

 

 

 

Part C3355
Description 2SC3355
Feature www.
DataSheet4U.
com DATA SHEET SHEET DA TA SILICON TRANSISTOR 2SC3355 HIGH FR EQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial tra nsistor designed for low noise amplifie r at VHF, UHF and CATV band.
It has lan ge dynamic range and good current chara cteristic.
PACKAGE DIMENSIONS in millim eters (inches) 5.
2 MAX.
(0.
204 MAX.
) F EATURES
• Low Noise and High Gain NF = 1.
1 dB TYP.
, Ga = 8.
0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz NF = 1.
1 d B TYP.
, Ga = 9.
0 dB TYP.
@VCE = 10 V, I C = 40 mA, f = 1.
0 GHz
• High Power G ain MAG = 11 dB TY .
Manufacture NEC
Datasheet
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Part C3355
Description 2SC3355
Feature www.
DataSheet4U.
com DATA SHEET SHEET DA TA SILICON TRANSISTOR 2SC3355 HIGH FR EQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial tra nsistor designed for low noise amplifie r at VHF, UHF and CATV band.
It has lan ge dynamic range and good current chara cteristic.
PACKAGE DIMENSIONS in millim eters (inches) 5.
2 MAX.
(0.
204 MAX.
) F EATURES
• Low Noise and High Gain NF = 1.
1 dB TYP.
, Ga = 8.
0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz NF = 1.
1 d B TYP.
, Ga = 9.
0 dB TYP.
@VCE = 10 V, I C = 40 mA, f = 1.
0 GHz
• High Power G ain MAG = 11 dB TY .
Manufacture NEC
Datasheet
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