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MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA05/D
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
NPN MPSA05 MPSA06 * PNP MPSA55 MPSA56 *
Voltage and current are negative for PNP transistors
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA05 MPSA55 60 60 4.0 500 625 5.0 1.5 12 – 55 to +150 MPSA06 MPSA56 80 80 Unit
*Motorola Preferred Device
Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
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Symbol Rq JA(1) Rq JC Max 200 83.3 Unit °C/W °C/W
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA05, MPSA55 MPSA06, MPSA56 V(BR)CEO MPSA05, MPSA55 MPSA06, MPSA56 V(BR)EBO ICES ICBO — — 0.1 0.1 60 80 4.0 — — — — 0.1 Vdc µAdc µAdc Vdc
1. Rq JA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.
v
v
Preferred devices are Motorola recommended choices for future use and best overall value.
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Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1
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NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base–Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) — — — — 0.25 1.2 Vdc Vdc —
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(3) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) fT MPSA05 MPSA06 MPSA55 MPSA56 100 — MHz
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
50
—
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN–ON TIME –1.0 V VCC +40 V 5.0 m s +10 V Vin 0 tr = 3.0 ns 5.0 m F 100 5.0 m s tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT DataSheet4U.com Vin
TURN–OFF TIME +VBB VCC +40 V RL OUTPUT RB 5.0 m F 100 * CS
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100
t 6.0 pF
t 6.0 pF
Figure 1. Switching Time Test Circuits
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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
NPN
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25°C f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 200 VCE = –2.0 V TJ = 25°C 100 70 50
PNP
100 70 50
30 20 –2.0 –3.0
30 2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. MPSA05/06 Current–Gain — Bandwidth Product
Figure 3. MPSA55/56 Current–Gain — Bandwidth Product
80 60 40 C, CAPACITANCE (pF) Cibo 20 C, CAPACITANCE (pF) TJ = 25°C
100 70 50 30 20 Cibo TJ = 25°C
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Cobo
10 8.0 6.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20
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10 Cobo 50 100 7.0 5.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. MPSA05/06 Capacitance
Figure 5. MPSA55/56 Capacitance
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5.0 7.0 10
ts t, TIME (ns)
1.0 k 700 500 300 200 100 70 50 30 20 VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C
ts
tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 500
tf
td @ VBE(off) = –0.5 V –20 –30 –50 –70 –100
tr –200 –300 –500
10 –5.0 –7.0 –10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. MPSA05/06 Switching Time
Figure 7. MPSA55/56 Switching Time
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Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
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NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
NPN
1.0 k 700 500 300 200 100 70 50 30 20 MPSA05 10 1.0 2.0 3.0 5.0 7.0 10 MPSA06 20 30 50 70 100 TC = 25°C TA = 25°C 100 m s 1.0 ms 1.0 s –1.0 k –700 –500 –300 –200 –100 –70 –50 –30 –20 –10 –1.0 –2.0 –3.0 –5.0 –7.0 –10 TC = 25°C TA = 25°C 1.0 s
PNP
100 m s 1.0 ms
I C , COLLECTOR CURRENT (mA)
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
I C , .