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SSTA06 / MMSTA06 / MPSA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06 / MPSA06
!Features 1) BVCEO < 80V.( IC=1mA) 2) Complements the SSTA56 / MMSTA56 / MPSA56. !External dimensions (Units : mm)
SSTA06
2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.95 +0.2 −0.1 0.45±0.1
2.4±0.2
1.3+0.2 −0.1
0~0.1 0.2Min.
!Package, marking and packaging specifications
Part No. Packaging type Mark Code Basic ordering unit (pieces) SSTA06 SST3 R1G T116 3000 MMSTA06 SMT3 R1G T146 3000 MPSA06 TO-92 T93 3000
(3) +0.1 0.15 − 0.06 0.4 +0.1 −0.05 All terminals have same dimensions
ROHM : SST3
(1) Emitter (2) Base (3) Collector
MMSTA06
2.9±0.2 1.9±0.2 0.95 0.95
1.1+0.2 −0.1 0.8±0.1
1.6 +0.2 −0.1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power SSTA06, MMSTA06 dissipation MPSA06 Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 80 80 4 0.5 0.2 0.625 150 -55~+150
Unit V V V A W ˚C ˚C
(3) 0.4 +0.1 −0.05 +0.1 0.15 − 0.06
2.8±0.2
!Absolute maximum ratings (Ta=25°C)
(1)
(2) 0~0.1
0.3~0.6
2.3
All terminals have same dimensions
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
4.8±0.2
MPSA06
4.8±0.2
3.7±0.2
(12.7Min.)
(1)
(2) 5
(3)
2.5 +0.3 −0.1 0.45±0.1
2.5Min.
0.5±0.1
ROHM : TO-92 EIAJ : SC-43
(1) Emitter (2) Base (3) Collector
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Symbol BVCBO BVCEO ICBO ICEO VCE(sat) VBE(ON) hFE fT Min. 4 80 100 100 100 Typ. Max. 0.1 1 0.25 1.2 Unit V V µA V V MHz IC=100µA IC=1mA VCB=80V VCE=60V IC/IB=100mA/10mA VCE/IB=1V/100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IE= −10mA, f=100MHz Conditions
SSTA06 / MMSTA06 / MPSA06
Transistors
!Electrical characteristics curves
100
COLLECTOR CURRENT : IC (mA)
Ta=25˚C 500µA
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
450µA 400µA 350µA 300µA 250µA
Ta=25˚C IC / IB=10 0.3
80
60
0.2
40
200µA 150µA
20
100µA 50µA
0.1
Ta=125˚C 25˚C
IB=0µA 0 0 5.0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE : VCE (V)
0
−40˚C 1 10 100 1000 COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter output characteristics
Fig.2 Collector-emitter saturation voltage vs. collector current
1000
Ta=25˚C
DC CURRENT GAIN : hFE
5V VCE=10V
100
3V 1V
10 0.1
1.0
10 100 COLLECTOR CURRENT : IC (mA)
1000
Fig.3 DC current gain vs. collector current ( I )
Ta=25˚C VCE=5V
Ta=125˚C 25˚C −40˚C
ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V)
1000
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 125˚C Ta=−40˚C 25˚C Ta=25˚C IC / IB=10
DC CURRENT GAIN : hFE
100
10 0.1
1.0
10 COLLECTOR CURRENT IC : (mA)
100
1000
Fig.4 DC current gain vs. collector current ( II )
Fig.5 Base-emitter saturation voltage vs. collector curr.