Silicon Transistor. TIP31 Datasheet

TIP31 Transistor. Datasheet pdf. Equivalent

TIP31 Datasheet
Recommendation TIP31 Datasheet
Part TIP31
Description NPN Epitaxial Silicon Transistor
Feature TIP31; TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor TIP31/TIP31A/TIP31B/TIP31C NPN Epitax.
Manufacture Fairchild Semiconductor
Datasheet
Download TIP31 Datasheet




Fairchild Semiconductor TIP31
TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP32/TIP32A/TIP32B/TIP32C
July 2008
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
VCEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
40
60
80
100
40
60
80
100
5
3
5
1
40
2
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
1
www.fairchildsemi.com



Fairchild Semiconductor TIP31
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW300ms, Duty Cycle2%
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
IC = 3A, IB = 375mA
VCE = 4V, IC = 3A
VCE = 10V, IC = 500mA, f = 1MHz
Min. Max. Units
40 V
60 V
80 V
100 V
0.3 mA
0.3 mA
200 μA
200 μA
200 μA
200 μA
1 mA
25
10 50
1.2 V
1.8 V
3.0 MHz
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
2
www.fairchildsemi.com



Fairchild Semiconductor TIP31
Typical Characteristics
1000
100
VCE = 4V
10
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
10000
10
IC(MAX) (PULSE)
IC(MAX) (DC)
1
100μs
TIP31 VCEO MAX.
TIP31A VCEO MAX.
TIP31B VCEO MAX.
TIP31C VCEO MAX.
0.1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
10000
1000
VBE(sat)
IC/IB = 10
100
VCE(sat)
10
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
50
45
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 4. Power Derating
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
3
www.fairchildsemi.com







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