High Voltage Thyristor Module
w w w . D a t a S h e e t 4 U . c o m
MCC 161 MCD 161
High Voltage Thyristor Module
ITRMS = 2x300 A ITAVM = 2x165 A V...
Description
w w w . D a t a S h e e t 4 U . c o m
MCC 161 MCD 161
High Voltage Thyristor Module
ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V
6 7 1 5 4 2 2 1 3 6 7 5 4
VRSM VDSM V 2100 2300
VRRM VDRM V 2000 2200
Type
MCC 3
MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1
MCD 3
1
54 2
Symbol ITRMS ITAVM ITSM
Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings 300 165 6000 6400 5250 5600 180000 170000 137000 128000 150 A A A A A A A2s A2 s A2s A2 s A/µs
Features International standard package Direct Copper Bonded Al2O3-ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits
I2dt
TVJ = 45°C; VR = 0 TVJ = TVJM; VR = 0
(di/dt)cr
TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 µs; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; tP = 30 µs tP = 500 µs
500 1000 120 60 8 10 -40...125 125 -40....
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