IXGX50N60C2D1

www.DataSheet4U.com HiPerFAST TM IGBT with Diode Preliminary Data Sheet IXGK 50N60C2D1 VCES IXGX 50N60C2D1 IC25 VCE(sat) C2-Class High Speed IGBTs tfi(typ) = 600 V = 75 A = 2.5 V = 48 ns Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 50 48 300 CM DataSheet4U.com V V V V A A A A A TO-264 AA (IXGK) G C (TAB) E PLUS247 (IXGX) G (TAB) E C I = 100 G = Gate E = Emitter C = Collector Tab = Collector DataShee Clamped inductive load @ VCE ≤ 600 V 480 -55 ... +150 150 -55 ... +150 W °C °C °C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 1.13/10 Nm/lb.in. 10 6 300 g g °C Features Very high frequency IGBT and anti-parallel FRED in one package Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers AC motor speed control DC servo and robot drives Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 25°C TJ = 125°C 5.0 650 5 ± 100 TJ = 25°C TJ = 125°C 2...