IXGX60N60B2D1

www.DataSheet4U.com Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ) = 600 V = 75 A < 1.8 V = 100 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 60 300 ICM = 150 V V V V A A A A TO-264 AA (IXGK) (TAB) C E G PLUS247 (IXGX) (TAB) DataSheet4U.com 500 -55 ... +150 150 -55 ... +150 W °C °C °C G = Gate E = Emitter C = Collector Tab = Collector DataShee Mounting torque, TO-264 TO-264 PLUS247 1.13/10 Nm/lb.in. 10 6 300 g g °C Features Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers AC motor speed control DC servo and robot drives Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C 5.0 300 5 ± 100 1.8 V µA mA nA V VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = ...