Document
E2G0010-17-41
¡ Semiconductor MSM514256C/CL
¡ Semiconductor
This version: Jan. 1998 MSM514256C/CL Previous version: May 1997
262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially designed for lower-power applications.
FEATURES
• 262,144-word ¥ 4-bit configuration • Single 5 V power supply, ± 10% tolerance • Input : TTL compatible, low input capacitance • Output : TTL compatible, 3-state • Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version) • Fast page mode, read modify write capability • CAS before RAS refresh, hidden refresh, RAS-only refresh capability • Package options: 20-pin 300 mil plastic DIP (DIP20-P-300-2.54-W1) (Product : MSM514256C/CL-xxRS) 26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514256C/CL-xxJS) 20-pin 400 mil plastic ZIP (ZIP20-P-400-1.27) (Product : MSM514256C/CL-xxZS) xx indicates speed rank.
PRODUCT FAMILY
Family MSM514256C/CL-45 MSM514256C/CL-50 MSM514256C/CL-60 MSM514256C/CL-70 Access Time (Max.) tRAC tAA tCAC tOEA 45 ns 24 ns 14 ns 14 ns 50 ns 26 ns 14 ns 14 ns 60 ns 30 ns 15 ns 15 ns 70 ns 35 ns 20 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 100 ns 120 ns 130 ns 468 mW 446 mW 385 mW 330 mW 5.5 mW/ 1.1 mW (L-version)
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PIN CONFIGURATION (TOP VIEW)
DQ1 1 DQ2 2 WE 3 RAS 4 NC 5 A0 6 A1 7 A2 8 A3 9 VCC 10 20 VSS
DQ1 1 19 DQ4 18 DQ3 17 CAS 16 OE 15 A8 14 A7 13 A6 12 A5 11 A4 DQ2 2 WE 3 NC 5 A0 9 RAS 4 A1 10 A2 11 A3 12 VCC 13 Pin Name A0 - A8 RAS CAS DQ1 - DQ4 OE WE VCC VSS NC
MSM514256C/CL
26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE 18 A8 17 A7 16 A6 15 A5 14 A4
OE 1 DQ3 3 VSS 5 DQ2 7 RAS 9 A0 11 A2 13 VCC 15 A5 17 A7 19
2 CAS 4 DQ4 6 DQ1 8 WE NO LEAD 12 A1 14 A3 16 A4 18 A6 20 A8
20-Pin Plastic ZIP 26/20-Pin Plastic SOJ
20-Pin Plastic DIP
Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (5 V) Ground (0 V) No Connection
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MSM514256C/CL
BLOCK DIAGRAM
RAS CAS Timing Generator Timing Generator
9
Column Address Buffers Internal Address Counter
9
Column Decoders
Write Clock Generator
WE OE
4
Output Buffers Input Buffers
4 4
A0 - A8
Refresh Control Clock
Sense Amplifiers
4
I/O Selector
4 4 4
DQ1 - DQ4
9
Row Address Buffers
9
Row Decoders
Word Drivers
Memory Cells
VCC On Chip VBB Generator VSS
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MSM514256C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Voltage on Any Pin Relative to VSS Short Circuit Output Current Power D.