NE663M04

www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04 NE663M04 DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE663M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. DataShee DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCE = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 10 mA GHz dB dB dBm dBm dB pF Gain Bandwidth at VCE = 3 V, IC = 90 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 50 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 50 mA, f = 2 GHz Output Power at 1 dB compression point at VCE = 2 V, IC = 70 mA5, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 70 mA, f = 2 GHz Noise Fi...