www.DataSheet4U.com
IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MO...
www.DataSheet4U.com
IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17445.
Features
1.5A, 500V rDS(ON) = 7.000Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds High Input Impedance 150oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFU410 IRFR410 PACKAGE TO-251AA TO-252AA BRAND IFU410 IFR410
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
ee DataSh
DataSheet4U.com
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
JEDEC TO-252AA
GATE SOURCE DRAIN (FLANGE)
DRAIN (FLANGE)
DataSheet4U.com
4-401
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
DataS...