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IRFR410B Dataheets PDF



Part Number IRFR410B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 500V N-Channel MOSFET
Datasheet IRFR410B DatasheetIRFR410B Datasheet (PDF)

www.DataSheet4U.com IRFR410B / IRFU410B November 2001 IRFR410B / IRFU410B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency .

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www.DataSheet4U.com IRFR410B / IRFU410B November 2001 IRFR410B / IRFU410B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • • • • • • 0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! DataShee DataSheet4U.com ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR410B / IRFU410B 500 0.9 0.57 3.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 40 0.9 2.0 5.5 2.5 20 0.16 -55 to +150 300 TJ, Tstg TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 6.25 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation DataSheet4U.com Rev. B1, November 2001 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRFR410B / IRFU410B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 520 V, VGS = 0 V VDS = 416 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.54 ------10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 0.45 A VDS = 40 V, ID = 0.45 A (Note 4) 2.0 --- -8.1 4.0 10 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---140 115 3.6 180 150 4.7 pF pF pF et4U.com Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 416 V, ID = 0.9 A, VGS = 10 V (Note 4, 5) DataSheet4U.com VDD = 260 V, ID = 0.9 A, RG = 25 Ω (Note 4, 5) -------- 13 35 30 30 5.1 0.95 2.2 35 80 70 70 6.6 --- ns ns ns ns nC nC nC DataShee Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.9 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.9 A, dIF / dt = 100 A/µs (Note 4) ------ ---160 0.4 0.9 3.0 1.4 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 89mH, IAS = 0.9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 0.9A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation DataSheet4U.com Rev. B1, November 2001 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRFR410B / IRFU410B Typical Characteristics 10 0 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 0 150 C o 10 -1 25 C -55 C ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test o o ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 25 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V IDR, Reverse Drain Current [A] 10 0 et4U.com 20 VGS = 20V DataShee 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 15 DataSheet4U.com ※ Note : TJ = 25.


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