IRFU420

www.DataSheet4U.com IRFR420, IRFU420 Data Sheet July 1999 File Number 2411.3 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. Features 2.5A, 500V rDS(ON) = 3.000Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR420 IRFU420 PACKAGE TO-252AA TO-251AA BRAND IRFR420 IRFU420 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., IRFR4209A. S DataShee DataSheet4U.com Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) DRAIN SOURCE DataSheet4U.com 4-407 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handlin...