IRFU48ZPBF

www.DataSheet4U.com PD - 95950 AUTOMOTIVE MOSFET IRFR48ZPbF IRFU48ZPbF HEXFET® Power MOSFET D Features l l l l l l Description Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 11mΩ G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications DataSheet4U.com and a wide variety of other applications. ID = 42A DataShee D-Pak IRFR48Z Max. 62 44 42 250 91 0.61 ± 20 W W/°C V mJ A mJ -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) A I-Pak IRFU48Z Units Absolute Maximum Ratings Parameter I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM ™ P D @T C = 25°C Power Dissipation V GS E AS (Tested ) I AR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 74 110 See Fig....