2SC5967

www.DataSheet4U.com Ordering number : ENN7614 2SC5967 NPN Triple Diffused Planar Silicon Transistor 2SC5967 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions unit : mm 2048B [2SC5967] 6.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 5.45 5.45 DataSheet4U.com Conditions Ratings 1700 800 5 20 40 3.5 180 150 --55 to +150 Unit V V V A A W W °C °C DataShee Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1700V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be rea...