Silicon Transistor. 2SC5960 Datasheet

2SC5960 Transistor. Datasheet pdf. Equivalent

Part 2SC5960
Description NPN Triple Diffused Planar Silicon Transistor
Feature www.DataSheet4U.com Ordering number : ENN7610 2SC5960 NPN Triple Diffused Planar Silicon Transistor.
Manufacture Sanyo Electric
Datasheet
Download 2SC5960 Datasheet




2SC5960
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Ordering number : ENN7610
2SC5960
NPN Triple Diffused Planar Silicon Transistor
2SC5960
Switching Regulator Applications
Features
High breakdown voltage and high reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Package Dimensions
unit : mm
2022A
[2SC5960]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
12
0.6
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
5.45
DataSheet4CUon.dcitoiomns
PW300µs, Duty Cycle10%
Collector Dissipation
Junction Temperature
Storage Temperature
PC Tc=25°C
Tj
Tstg
Electrical Characteristics at Ta=25°C
5.45
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=400V, IE=0
VEB=5V, IC=0
min
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
500
400
7
7
14
3
2.5
60
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
DataShee
Ratings
typ
max
Unit
10 µA
10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504KB TS IM TA-100660 No.7610-1/4
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2SC5960
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2SC5960
Continued from preceding page.
Parameter
Symbol
Conditions
DC Current Gain
hFE1
hFE2
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
hFE3
VCE(sat)
VBE(sat)
fT
Output Capacitance
Cob
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-On Time
V(BR)EBO
ton
Storage Time
tstg
Fall Time
tf
* : The hFE1 of the 2SC5960 is classified as follows.
Rank
M
N
hFE
20 to 40
30 to 50
VCE=5V, IC=0.8A
VCE=5V, IC=4A
VCE=5V, IC=1mA
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V
min
20*
10
10
Ratings
typ
15
50
500
400
7
max
50*
0.8
1.5
0.5
2.5
0.3
Unit
V
V
MHz
pF
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
OUTPUT
RL
50
++
100µF
470µF
et4U.com
10
9 700mA
8 600mA
7
6
5
4
3
2
VBE= --5V
VCC=200V
DataSheet4U.com
IC -- VCE
8
900mA
800mA
1000mA
7
500mA
400mA
300mA
200mA
100mA
6
5
4
3
2
IC -- VBE(on)
VCE=5V
1
0
0
100
7
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT05057
hFE -- IC
VCE=5V
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter ON-State Voltage, VBE(on) -- V IT05149
VCE(sat) -- IC
1.0
7 IC / IB=5
5
5 Ta=120°C
3
3 25°C
2 --40°C
2
25°C
0.1 Ta= --40°C
7
5 120°C
DataShee
10
7
DataSheet4U.com50.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A
IT05151
DataSheet4 U .com
3
2
0.01
0.01
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A
IT05152
No.7610-2/4
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