Power Transistor. 2SC5905 Datasheet

2SC5905 Transistor. Datasheet pdf. Equivalent

Part 2SC5905
Description Silicon NPN triple diffusion mesa type Power Transistor
Feature www.DataSheet4U.com Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal de.
Manufacture Panasonic Semiconductor
Datasheet
Download 2SC5905 Datasheet



2SC5905
www.DataSheet4U.com
Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Features
High breakdown voltage: VCBO 1 700 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 700
V
1 700
V
600 V
7V
8A
20 A
30 A
70 W
Da3t.a5 Sheet4U.com
150 °C
55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
DataShee
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 10 A
IC = 10 A, IB = 2.5 A
IC = 10 A, IB = 2.5 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 10 A, Resistance loaded
IB1 = 2.5 A, IB2 = −5.0 A
50 µA
1 mA
50 µA
5 12
3V
1.5 V
3 MHz
3.0 µs
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
DataSheet4U.com
Publication date: June 2004
DataSheet4 U .com
SJD00306BED
DataSheet4U.com
1



2SC5905
www.DataSheet4U.com
2SC5905
PC Ta
3
Without heat sink
2
1
0
0 50 100 150
Ambient temperature Ta (°C)
IC VCE
10 1.4 A
1.2 A
1.0 A
0.8 A
8 1.6 A
0.6 A
0.4 A
6
4
0.2 A
2
0 IB = 0 A
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC VBE
12
8
4 Ta = 120°C
25°C
40°C
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
et4U.com
10
1
101
VCE(sat) IC
Ta = 120°C
25°C
40°C
102
101
1 10
Collector current IC (A)
102
hFE VCE
102
Ta = 120°C
25°C
10 40°C
DataSheet4U.com
1
102
101
1
10 102
Collector-emitter voltage VCE (V)
tf IB(END)
1 000
fH = 32 kHz
IC = 10 A
L load
800 DataShee
600
400
200
0
0.4 0.8 1.2 1.6
Base current IB(END) (A)
tstg IB(END)
2.0
fH = 32 kHz
IC = 10 A
L load
1.6
1.2
0.8
0.4
0
0.4 0.8 1.2 1.6
Base current IB(END) (A)
DataSheet4U.com
2
DataSheet4 U .com
Area of safe operation
102
ICP = 30 A
PC = 70 W
10 IC = 20 A
10 ms
t = 100 µs
1 ms
DC operation
1
Area of safe operation (Horizontal operation)
fH = 32 kHz, TC < 90°C
ASO for a single
30 pulse load caused by
EHT flashover during
horizontal operation.
20
101
102
103
1
TC = 25°C
Single pulse
10
102 103
Collector-emitter voltage VCE (V)
10
< 1 mA
0
0 500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
SJD00306BED
DataSheet4U.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)