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6DI15S-050

Fuji Semiconductors

TRANSISTOR

6DI15S-050 (15A) Features High DC Current Gain High Speed Switching Including Eree Wheeling Diode Insulated Type FUJI P...


Fuji Semiconductors

6DI15S-050

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6DI15S-050 (15A) Features High DC Current Gain High Speed Switching Including Eree Wheeling Diode Insulated Type FUJI POWER TRANSISTOR MODULE Outline Drawings Applications Power Switching AC Motor Controls DC Motor Controls Uninterruptible Power Supply Unit:mm : Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol VCBO VCEO VCEO(SUS) VEBO IC ICP -IC IB IBP PC PC Tj Tstg m Viso Mounting *1 ”pŒ^‹@Ží Equivalent Circuit Schematic V V V V A A A A A W W °C °C g V N m DC 1ms DC DC 1ms one Transistor six Transistors Rating 600 600 450 6 15 30 15 2 5 40 360 +150 -40 to +125 40 2000 1.7 Unit AC.1min Electrical characteristics (Tc =25°C unless otherwise specified) Item Symbol VCBO VCEO(SUS) VCEX(SUS) ICBO IEBO -V CE hFE VCE(Sat) VBE(Sat) ton tstg tf t rr Test Conditions ICBO = 1mA IC = 1A IC=15A IB=-±0.5A VEB=6V VCBO = 600V VEBO = 6V -IC = 15A IC = 15A, VCE = 5V IC = 15A, IB = 0.5A IC = 15A RL=20 IB1 = +0.5A PW=50µs IB2 = -0.5A VCE=300V -Ic=15A,VBE=-6V, -di/dt=50A/µs Di n o c s t e u n i d d o r p . t c u Min. 600 450 500 Typ. Max. Units V V V mA mA V V V µs µs µs µs 1.0 200 1.5 100 2.0 2.5 1.0 12.0 2.0 0.4 Thermal characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Transistor Diode With Thermal Compound Min. Typ. Max. 2.1 2.5 Units °C/W °C/W °C/W 0.05 Free Datasheet http://www.datasheet4u.com/ 1 6DI15S-050 (15A) Characteristics FUJI POWER TRANSISTOR MODULE ”pŒ^‹@Ží Di n o c s ...




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