STZT2907

STZT2907 STZT2907A MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE STZT2222 AND STZT2222A RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter STZT2907 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value STZT2907A -60 -60 -5 -0.8 -1.5 -65 to 150 150 -60 -40 Unit V V V A W o o C C 1/4 October 1995 DataSheet 4 U .com STZT2907/STZT2907A THERMAL DATA R thj-amb R thj-tab Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 83.3 10 o o C/W C/W Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX IBEX V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = 0.5V) Base Cut-off Current (V BE = 0.5V) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO V CE = -30 V V CE = -30 V I C = -10 µ A T amb = 125 C o Min. Typ. Max. -20 -10 -50 -50 Unit nA µA nA nA V for STZT2222A for STZT2222...