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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz Broad Band Internally Matched Hermetically sealed package RF Performance Specifications (Ta = 25° C)
Characteristics Output Power at 1dB Comp...
