Microwave Power GaAs FET
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TOSHIBA
Oct. 1999
TIM1414-10LA-252
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power a...
Description
www.DataSheet4U.com
TOSHIBA
Oct. 1999
TIM1414-10LA-252
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc °C
( Ta= Ta= 25°C )
MIN. TYP. MAX. UNIT 39.0 39.5 dBm
CONDITION
ηadd
IM3 ∆Tch
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2. ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
( Ta= Ta= 25°C )
MIN. TYP. MAX. UNIT -2.0 -5 2800 -3.5 -5.0 mS V A V °C/W
CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS=0V IGS= -145µA
Channel to Case
gm
VGSoff IDSS VGSO Rth(c-c)
10.0 11.5 2.0 2.5
Applications Engineering Solid-State Engineering Department
TOSHIBA CORPORATION, Komukai Operations
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