Power Transistor. B1566 Datasheet
For Power Amplification (−60V, −3A)
PNP Silicon Epitaxial Planar Transistor
1) Low VCE (sat).
2) Wide SOA.
Stabilized power supply
zExternal dimensions (Unit : mm)
(1) (2) (3)
zAbsolute maximum ratings (Ta=25°C)
Collector power dissipation
∗1 Pw=100ms, single pulse
−55 to +150
zPackaging specifications and hFE
hFE Basic ordering unit (pieces)
hFE values are classified as follows:
hFE 100 to 200 160 to 320
zElectrical characteristics (Ta=25°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Collector output capacitance
∗1 Pulse test
− V IC=−1mA
− V IC=−50µA
− V IE=−50µA
−1.0 µA VCB=−60V
−1.0 µA VEB=−4V
−1.0 V IC/IB=−2A/−0.2A
−1.5 V IC/IB=−2A/−0.2A
320 − VCE=−3V, IC=−0.5A
− MHz VCE=−5V, IE=0.5A, f=30MHz ∗1
− pF VCB=−10V, IE=0A, f=1MHz
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